Dissipative Kerr solitons (DKSs) with mode-locked pulse trains in high-Q optical microresonators possess low-noise and broadband parallelized comb lines, having already found plentiful cutting-edge applications. However, thermal bistability and thermal noise caused by the high microresonator power and large temperature exchange between microresonator and the environment would prevent soliton microcomb formation and deteriorate the phase and frequency noise. Here, a novel method that combines rapid frequency sweep with optical sideband thermal compensation is presented, providing a simple and reliable way to get into the single-soliton state. Meanwhile, it is shown that the phase and frequency noises of the generated soliton are greatly reduced. Moreover, by closing the locking loop, an in-loop repetition rate fractional instability of 5.5×10-15 at 1 s integration time and a triangular linear repetition rate sweep with 2.5 MHz could be realized. This demonstration provides a means for the generation, locking, and tuning of a soliton microcomb, paving the way for the application of single-soliton microcombs in low-phase-noise microwave generation and laser ranging.

Terahertz metasurfaces have great applications for efficient terahertz modulation, but there are still problems in designing terahertz metadevices in terms of complexity and inefficiency. Herein, we demonstrate an inversely-designed terahertz metasurface with double electromagnetically induced transparency (EIT)-like windows by incorporating a particle swarm optimization (PSO) algorithm with the finite-difference time-domain method. We prepared and tested the metadevices, and the experimental terahertz signals are close to the designed results. By hybridizing amorphous germanium film with the inversely-designed metasurface, two EIT-like windows, including transmission and slow-light effect, exhibit ultrafast modulation behavior in 25 ps excited by a femtosecond laser. The modulation depths of transmission in two transparency windows are 74% and 65%, respectively. The numerical simulations also illustrate the ultrafast dynamic process and modulation mechanism, which match well with the experiment results. Our work thus offers opportunities for designing other objective functions of the terahertz metadevice.

We present a theoretical analysis of a novel multi-channel light amplification photonic system on chip, where the nonlinear Raman amplification phenomenon in the silicon (Si) wire waveguide is considered. Particularly, a compact and temperature insensitive Mach–Zehnder interferometer filter working as demultiplexer is also exploited, allowing for the whole Si photonic system to be free from thermal interference. The propagation of the multi-channel pump and Stokes lights is described by a rigorous theoretical model that incorporates all relevant linear and nonlinear optical effects, including the intrinsic waveguide optical losses, first- and second-order frequency dispersion, self-phase and cross-phase modulation, phase shift and two-photon absorption, free-carriers dynamics, as well as the inter-pulse Raman interaction. Notably, to prevent excessive drift of the transmission window of the demultiplexer caused by ambient temperature variations and high thermo-optical coefficient of Si, an asymmetric waveguide width is adopted in the upper and lower arms of each Mach–Zehnder interferometer lattice cell. A Chebyshev half-band filter is utilized to achieve a flat pass-band transmission, achieving a temperature sensitivity of <1.4pm/K and over 100 K temperature span. This all-Si amplifier shows a thermally robust behavior, which is desired by future Si-on-insulator (SOI) applications.

Metasurface plays a key role in various terahertz metadevices, while the designed terahertz metasurface still lacks flexibility and variety. On the other hand, inverse design has drawn plenty of attention due to its flexibility and robustness in the application of photonics. This provides an excellent opportunity for metasurface design as well as the development of multifunctional, high-performance terahertz devices. In this work, we demonstrate that, for the first time, a terahertz metasurface supported by the electromagnetically induced transparency (EIT) effect can be constructed by inverse design, which combines the particle swarm optimization algorithm with the finite-difference time-domain method. Incorporating germanium (Ge) film with inverse-designed metasurface, an ultrafast EIT modulation on the picosecond scale has been experimentally verified. The experimental results suggest a feasibility to build the terahertz EIT effect in the metasurface through an optimization algorithm of inverse design. Furthermore, this method can be further utilized to design multifunctional and high-performance terahertz devices, which is hard to accomplish in a traditional metamaterial structure. In a word, our method not only provides a novel way to design an ultrafast all-optical terahertz modulator based on artificial metamaterials but also shows the potential applications of inverse design on the terahertz devices.

Active control of metamaterial properties with high tunability of both resonant intensity and frequency is essential for advanced terahertz (THz) applications, ranging from spectroscopy and sensing to communications. Among varied metamaterials, plasmon-induced transparency (PIT) has enabled active control with giant sensitivity by embedding semiconducting materials. However, there is still a stringent challenge to achieve dynamic responses in both intensity and frequency modulation. Here, an anisotropic THz active metamaterial device with an ultrasensitive modulation feature is proposed and experimentally studied. A radiative-radiative-coupled PIT system is established, with a frequency shift of 0.26 THz in its sharp transparent windows by polarization rotation. Enabled by high charge-carrier mobility and longer diffusion lengths, we utilize a straightforwardly spin-coated MAPbI3 film acting as a photoactive medium to endow the device with high sensitivity and ultrafast speed. When the device is pumped by an ultralow laser fluence, the PIT transmission windows at 0.86 and 1.12 THz demonstrate a significant reduction for two polarizations, respectively, with a full recovery time of 561 ps. In addition, we numerically prove the validity that the investigated resonator structure is sensitive to the optically induced conductivity. The hybrid system not only achieves resonant intensity and frequency modulations simultaneously, but also preserves the all-optical-induced switching merits with high sensitivity and speed, which enriches multifunctional subwavelength metamaterial devices at THz frequencies.

In this work, a soliton mode-locked erbium-doped fiber laser (EDFL) with a high-quality molecular beam epitaxy (MBE)-grown topological insulator (TI) Bi₂Se₃ saturable absorber (SA) is reported. To fabricate the SA device, a 16-layer Bi₂Se₃ film was grown successfully on a 100 μm thick SiO₂ substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm². After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength, pulse energy, pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 pJ, 1.08 ps, and 60 dBm, respectively. These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.

Here, we used the micro P-scan method to investigate the saturated absorption (SA) of different layered Bi2Se3 continuous films. Through resonance excitation, first, we studied the influence of the second surface state (SS) on SA. The second SS resonance excitation (～2.07eV) resulted in a free carrier cross section that was 4 orders of magnitude larger than usual. At the same time, we found that the fast relaxation process of the massless Dirac electrons is much shorter than that of electrons in bulk states. Moreover, the second SS excitation resonance reduced the saturation intensity. Second, we studied the effect of the thickness on the SA properties of materials. The results showed that the saturation intensity was positively correlated to the thickness, the same as the modulation depth, and the thicker the Bi2Se3 film was, the less the second SS would influence it. This work demonstrated that by using Bi2Se3 as a saturable absorber through changing the thickness or excitation wavelength, a controllable SA could be achieved.